2SK1310A 2001-01-31 1/4 toshiba field effect transistor silicon n channel mos type 2SK1310A rf power mos fet for vhf tv broadcast transmitter output power : po 1 90 w (min.) drain efficiency : d = 65% (typ.) frequency : f = 230 mhz push ? pull structure package maximum ratings (tc = 25c) characteristic symbol rating unit drain-source voltage v dss 100 v gate-source voltage v gss 20 v drain current i d 12 a reverse drain current i dr 12 a drain power dissipation p d 250 w channel temperature t ch 150 c storage temperature range t stg ? 55~150 c jedec ? eiaj ? toshiba 2 ? 22c2a weight: 17.5 g unit in mm toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in g eneral can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibi lity of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, a nd to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury o r damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handlin g guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfun ction o r failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energ y control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion cont rol instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this docume n t shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assume d b y toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from i ts use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation o r others. the information contained herein is subject to change without notice. 000707 eaa1
2SK1310A 2001-01-31 2/4 electrical characteristics (tc = 25c) characteristic symbol test condition min. typ. max. unit output power po 190 220 ? w drain efficiency d v dd = 50 v, i idle = 0.2 a 2 pi = 10 w, f = 230 mhz * ? 65 ? % drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 100 ? ? v drain cut-off current i dss v ds = 80 v, v gs = 0 ? ? 1.0 ma gate threshold voltage v th i d = 1 ma, v ds = 10 v 0.5 ? 3.0 v drain-source on resistance r ds (on) i d = 4 a, v gs = 10 v ** ? 0.9 1.5 ? drain-source on voltage v ds (on) i d = 4 a, v gs = 10 v ** ? 3.6 6.0 v forward transfer admittance |y fs | i d = 3 a, v ds = 20 v ** 0.9 1.3 ? s input capacitance c iss v ds = 50 v, v gs = 0, f = 1 mhz ? 100 ? pf output capacitance c oss v ds = 50 v, v gs = 0, f = 1 mhz ? 40 ? pf reverse transfer capacitance c rss v ds = 50 v, v gs = 0, f = 1 mhz ? 1 ? pf *: push ? pull operation **: pulse test this transistor is the electrostatic sensitive device. please handle with caution.
2SK1310A 2001-01-31 3/4 rf output power test fixture
2SK1310A 2001-01-31 4/4 caution these are only typical curves and devices are not necessarily guaranteed at these curves.
|
